The effect of an external magnetic field, doping, and bias voltage on the thermoelectric and thermodynamic of S-graphene monolayer

Abstract

In the present report, we studied the thermoelectric and thermodynamic properties of the S-graphene (SG) monolayer under the effect of the external magnetic field, electron/hole doping, and bias voltage by the tight-binding (TB) model. The Green function method has been applied for calculating the electronic heat capacity, Pauli magnetic susceptibility, electronic thermal conductivity, Seebeck coefficient, and electrical conductivity of the SG monolayer. The results show that the electronic heat capacity increases by the magnetic field, which is in agreement with Einstein's Debye relation. It has been observed that the SG monolayer can act as a p-type or n-type semiconductor by applying the studied parameters (doping, external magnetic field, and bias voltage), which means the semiconductor type of SG is controlled by electron/hole doping and applying magnetic field, and bias voltage. Our results show that the SG monolayer is a paramagnetic material, but it depends on bias voltage and external magnetic field. Also, the total Pauli magnetic susceptibility is enhanced in the presence of an external magnetic field.