The effect of an anisotropic pressure on the reverse currents and the lifetime of minority carriers in germanium diodes

Abstract

The effect of pressure on the reverse currents, the lifetime of minority carriers and the charging capacitance of fused germanium diodes is considered. The p-n junctions are arranged in the (111) crystallographic plane. It is established that the reverse current increases rapidly with increased pressure. The lifetime of minority carriers falls by a factor of 1.5 to 2 up to a pressure of 3 · 109 dyne/cm2 and the charging capacitance increases. Starting from a pressure of 3 · · 109 dyne/cm2 the lifetime of minority carriers increases and the charging capacitance is reduced to a particular constant value. A qualitative explanation of the dependence of τe, Cj and Irev is given.