THE EFFECT OF AMOUNT TANTALUM DOPING ON THE PROPERTIES OF MgCuZn FERRITES

Abstract

The systems MgCuZn Fe 2 O 4 doped (0–0.6 wt% Ta) are prepared by the general ceramic method using the sintering temperature at 1200°C. The variations of the sintered density, lattice parameter, jump length of electrons, and initial permeability were studied. A maximum density was obtained at 1200°C during the preparation process. The electrical resistivity decreases with increasing tantalum ( Ta ) content upto 0.1 wt% and then increases for higher concentrations. The initial permeability and the change carries mobility increase upto 0.1 Ta and then decreases. The jump length decreases with enhancing Ta ions because the substitution of Ta ion with small size instead of Fe 3+ at the A sites increase the concentration of iron ions at the B sites. The increase of the iron content causes the decrease of the jump length of electrons between Fe 3+ and Fe 2+. These improvements of the magnetic properties give some light about the importance of these compositions to be used in technology.