Abstract
The behavior of Si in AlxGa1−xAs grown by molecular beam epitaxy (MBE) has been studied. Temperature-dependent Hall measurements were made to investigate the doping behavior of Si in MBE grown AlxGa1−xAs across the composition range 0.2<x<0.8. Aluminum composition was determined using photoluminescence. Doped AlxGa1−xAs layers were separated from underlying semi-insulating GaAs substrates by an unintentionally doped AlxGa1−xAs spacer layer and a 0.2 μm GaAs buffer layer. Low-temperature mobility of the structures proved that no two-dimensional electron gas was formed at the GaAs/AlxGa1−xAs interface. Therefore, the data obtained are characteristic of bulk AlxGa1−xAs. Si donor activation energy increased from ∼6 meV for GaAs to ∼200 meV for x=0.33 and decreased for x>0.6. Net electron concentration and mobility were also strongly dependent on aluminum composition.
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