Abstract
Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7 were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer was revealed: faceted structure of the buffer layer surface reduces the threading dislocations density. Keywords: semipolar GaN, transmission electron microscopy, dislocation, Si(001) substrate
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
