Abstract
Aluminum doped zinc oxide thin films were synthesized by the chemical vapor deposition (CVD) on the glass substrate. The optical and structural properties of these films as a function of Al content (0,1,5,10 wt.%) were investigated. The average transmittance of all films is higher than 80% at a wide wavelength of 300-800nm. The bandgap energy, calculated for all samples with different Al dopant concentration, is around 3. 35-3.56eV. X-ray diffraction results reveal that A1/ZnO films have a hexagonal wurtzite structure with (002) preferred orientation. Top and cross-sectional scanning electron microscopy (SEM) micrographs of the prepared ZnO samples exhibit the crystalline growth structures by increasing Al concentration. Doping the ZnO with A$1^{3+}$ influences the volume composition of ZnO:A1 thin films, causes an increase in the surface roughness with an increase in the Al and O content, and a decrease in the average Zn concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
