Abstract
The effects of adsorbed atomic hydrogen on the stability of silicon films grown on a Ge(100) substrate were studied by using positron-annihilation-induced Auger electron spectroscopy (PAES) and electron-induced Auger electron spectroscopy (EAES). PAES is almost exclusively sensitive to the topmost atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity was exploited in the study of film stability and interfacial mixing during the growth of silicon on Ge(100). The PAES results show that the prior adsorption of hydrogen prevented the segregation of germanium on top of the deposited silicon, and that the hydrogen adsorption was useful in growing a thermally stable structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
