Abstract
In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO3 ceramics. Moreover, this study indicated that for acceptor-doped BaTiO3 ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications.
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