Abstract
In this paper we present a technique that can be used to study the effect of absorption and coherent interference in the luminescence of multilayer structures. We apply the technique to the measured photoluminescence and electroluminescence spectra of MIS capacitors where the insulator is composed of a silicon rich oxide (SRO)/silicon rich nitride (SRN) bilayer structure. We remove the effect of the multilayer stack on the measured photoluminescence spectrum of the samples without the metal contact to find the intrinsic spectrum. Then we apply the effect of the MIS structure on the intrinsic spectrum in order to calculate the electroluminescence spectrum. Good agreement with the experimentally measured EL spectrum is found. We discuss which parameters affect the spectra most significantly.
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