Abstract
Hard amorphous carbon films prepared by ion beam assisted deposition on silicon wafers were investigated before and after modification by 20 keV carbon ion beams of different fluences ranging from 10 13 to 10 18 carbon ions per cm 2. The characterization of the as-deposited and post-treated films compares changes of the microstructure by Raman spectroscopy and changes of mechanical properties as the ultra-microhardness and electrical resistivity. The results show fluency-dependent effects of all measured properties. A strong correlation of the effects was found between electrical resistivity and microhardness.
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