Abstract
Metal–ferroelectric–semiconductor Pb(ZrTi)O3/Ba0.2Sr0.8TiО3/Si(001) heterostructures have been synthesized by radiofrequency cathode sputtering. It has been established that the Pb(ZrTi)O3 films are single-phase and textured and the degree of predominance of one crystallographic orientation over another (110 or 001) is determined by the Ba0.2Sr0.8TiO3 sublayer thickness. It is shown that, by varying the sublayer thickness and/or the amplitude of one period of the external bipolar field effect, one can obtain different electric states of the structure, which can give rise to creating memory cells, including multilevel ones.
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