Abstract
Two thousand arrays of second generation (6HP) silicon–germanium heterojunction bipolar transistors (SiGe HBTs) were exposed to 63 MeV hydrogen ions at a fluence ranging from 1×1012 to 5×1013 cm−2. The dc electrical measurements, such as Gummel characteristics, excess base current (Δ I B=I Bpost−I Bpre), current gain (h FE), neutral base recombination, avalanche multiplication factor (M−1) and output characteristics (V CE–I C), were systematically studied before and after hydrogen ion irradiation. The SiGe HBT showed 80% degradation in forward-mode dc current gain after a total dose of 5×1013 cm−2 hydrogen ion irradiation.
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