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Abstract
The effect of 3-MeV proton irradiation on InGaN/GaN multiple quantum wells (MQWs) solar cells was investigated. The irradiation degradation of the photoluminescence characteristics of the InGaN film was also measured, indicating its potential to be used in space solar cells. With the proton fluence increasing from 0 to 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , the conversion efficiency (η) of the InGaN/GaN MQWs cell declined from 0.61% to 0.14%.
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