Abstract

In this study, Tin monosulfide SnS semiconductor absorbers was deposited by chemical spray pyrolysis route on the glass substrate. We examined the impact of substrate temperature on the structural, morphological, linear optical and electrical characteristics of SnS absorber at many substrate temperatures such as 50 °C, 375 °C and 400 °C. The SnS films have been analysed by diverse techniques like X-ray diffraction, Raman spectroscopy, Scanning electron microscopy and UV-Vis spectrophotometer. The X-ray diffraction (XRD) spectra revealed that the SnS crystallize in the orthorhombic crystal system with the apparition of the preferential crystallographic direction oriented along (111) planes. The SEM micrographs indicate a great uniformity and granular morphological surface of SnS films. Linear optical constants such as energy gap (Eg), coefficient of extinction (k), index of refraction (n), optical conductivity (σopt), as well as the electrical properties confirm the suitable application of SnS thin films as absorber layer in the optoelectronic device applications. Additionally, we have applied the density functional theory DFT and GGA generalized gradient approximation to study the electronic characteristics; as a result of the electronic band structure the SnS absorber has a suitable energy gap.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.