Abstract
One of the effects observed in the irradiation of semiconductors by powerful pulses of coherent and incoherent light sources in the range of durations from 0.2 ms to 10 s is the effect of anisotropic local melting. It allows valuable physical information on semiconductor properties and processes occurring in the sample during and after pulse irradiation to be obtained. Here the dynamics of anisotropic local melting of implanted silicon for different regimes of light pulses is investigated. The nucleation and growth of local regions of melting (LRM) during the light irradiation was detected by a high-speed camera. The time dependencies of the quantity and sizes of LRMs were dynamically observed for the first time. Diffraction gratings were formed using ion implantation and the effect of local melting. The dynamics of diffraction during and after the light pulse irradiation were studied. The results allow the specification of the mechanism of the effect of anisotropic local melting, and the optimization of the regimes of pulse annealing of implanted semiconductors and the regimes of formation of submicron dopant layers by rapid thermal diffusion from spin-on sources.
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