The dynamic interaction of triethyl gallium with GaAs(100) surfaces monitored using optical second-harmonic generation

Abstract

The authors report the results of a preliminary investigation into the use of optical second-harmonic generation (SHG) as a probe of surface processes involved in semiconductor growth. It is demonstrated that a predominantly surface SH signal may be generated from GaAs(100) substrates. The dynamic interaction of triethyl gallium, a typical reactant in MOVPE growth of GaAs, with an As-rich GaAs(100) surface at 300 K has been monitored using SHG. It is shown that this interaction gives rise to a permanent increase in the SH intensity.