Abstract
A detailed analysis of the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> capability of field-controlled thyristors is presented. It is demonstrated for the first time that <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> induced turn-on can occur in these devices due to gate debiasing as a result of capacitive gate current flow if a large series gate resistance is present in the circuit. A theoretical analysis of the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> capability is presented based upon this mechanism which predicts that the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> capability will decrease inversely with increasing gate series resistance at low values and become independent of the gate series resistance at very high values. The quantitative calculations of the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> capability that have been made by using this theory are in very good agreement with measurements taken on asymmetrical field-controlled thyristors fabricated from wafers of various thickness. The results obtained in this study allow the conclusion that the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV/dt</tex> capability of field-controlled thyristors are superior to that of conventional thyristors.
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