Abstract
In this study, the etching characteristics of HfAlO3 thin film were investigated by varying the etch parameters such as the gas mixing ratio, the radio frequency power, the direct current bias voltage, and the process pressure in an inductively coupled plasma. The maximum etch rate of HfAlO3 thin film and the selectivity of HfAlO3 to SiO2 were 20.55 nm/min and 0.38 in the CF4/Cl2/Ar (2:6:14 sccm) plasma, respectively. The plasma was analyzed by using optical emission spectroscopy. The chemical states on the surfaces of the etched HfAlO3 thin film were investigated with X-ray photoelectron spectroscopy. The etching of HfAlO3 thin films is performed by the interaction of Hf and Al atoms with the Cl and F radical in the CF4/Cl2/Ar plasma. However, their byproducts were remained at the surface because Hf-F and Al-F were non-volatile. Therefore, the plasma etching of the HfAlO3 films follows the ion assisted chemical reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
