The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films.

Emanuele Orgiu,Karl Börjesson,Marco A Squillaci,Wassima Rekab,Lei Zhang,Paolo Samorì,Fabiola Liscio

doi:10.1039/c5cc00151j

Abstract

Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm(2) V(-1) s(-1) are reported.

Highlights

We report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA)
If organic electronics is to go to the market place, realizing complementary circuits as well as finding valid replacements for electron acceptors in oSC becomes of paramount importance
We investigate the effects of the annealing temperature and duration of the above-mentioned fullerene molecule and correlate the film morphology to the transport of electrons in thin-film transistors

Summary

Introduction

We report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). We investigate the effects of the annealing temperature and duration of the above-mentioned fullerene molecule and correlate the film morphology to the transport of electrons in thin-film transistors.

Results

Conclusion