Abstract
A computer study of the high-frequency negative resistivity distribution profiles in the active layer of double-drift-region (DDR) silicon IMPATT diodes for operation at atmospheric window frequencies in the millimetre-wave range is presented. Iterative simulation programmes have been framed for static and high-frequency realistic analyses of IMPATT diodes. These analyses provide an insight into the relative contribution to microwave power produced by two types of charge carriers in their respective drift regions, and also a knowledge of the intensity of IMPATT oscillation at various space points of the active layer. The negative resistivity profiles exhibit one peak in the middle of each drift layer separated by a minimum in the avalanche layer. This indicates that the drift regions of the diode are major contributors to microwave power generated by a DDR IMPATT device. The space distribution of negative resistivity, as well as the magnitudes of the negative resistivity peaks, depends on the ionisation rates of electrons and holes in silicon and on the mobile space-charge density.
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