Abstract
The high strain sensitivity of double crystal X-ray topography in conjunction with a synchrotron radiation source has been utilised to measure relative lattice strains and tilts in whole 2″ diameter semi-insulating LEC GaAs. In-doped material shows long range strain variations of 91 ppm and strains of 7ppm are shown to be associated with isolated slip bands. Undoped material is more uniform with increases in lattice strain of 20–30ppm at the wafer periphery. Lattice tilt maps of undoped material show a symmetry which is linked to the dislocation distribution as revealed by a KOH etch.
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