Abstract
Silicon films deposited on Au/Si layers at deposition temperatures at or above 380 °C are single crystal, while Si films deposited on Si with a native oxide are amorphous up to 500 °C and ordered polycrystalline above 500 °C. The initial gold (300 Å) deposit migrates to the growing epitaxy surface where it nucleates in clusters. RBS and AES analysis indicated that 0.1 at.% gold remains distributed throughout the epitaxial film.
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