Abstract
Abstract Whilst the surfaces of several semiconductors have received extensive study, less attention has been paid to what happens below the surface. We have examined the electronic structure of both arsenic and gallium unrelaxed (001) surfaces, our results demonstrating the rather openess of these surfaces for adsorption by impurities. It is also shown that electronic structure up to at least the fourth or fifth layers of atoms into the bulk is affected, and that regions of large charge density are not centred on lattice positions.
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