Abstract
We demonstrate the distorted K1 soft mode for the phonon instability of single layer hexagonal-BN sheet under tension, which is different from the well known K1 mode failure mechanism of graphene. We also investigate the influences of charge doping on the soft mode phonon instability. Meanwhile, the ideal strength is found to be larger for both p- and n-type doped h-BN sheet, reflecting the electronic strengthening effect as similar as graphene. Our results reveal a different soft mode for h-BN sheet from that of graphene and can serve as references for future applications of h-BN sheet.
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