Abstract
Dissociation in plasma-enhanced chemical vapor deposition for SiO2 deposition using tetraethoxysilane (TEOS) was investigated by means of mass spectrometry. First we obtained the basic dissociation patterns of TEOS by electron impact. It was shown that TEOS was dissociated by electron impact at low electron energies below 7 eV, removing the ethyl group (C2H5). Next we determined dissociation patterns in TEOS/He plasma in order to eliminate the effect of oxidation. Finally, dissociation in TEOS/O2 plasma was investigated. It was found that oxidation plays an indispensable role in the deposition of high-quality SiO2 films due to the decrease in high-molecular-weight compounds with carbon and hydrogen, although TEOS is highly dissociated by electron impact. © 1999 Scripta Technica, Electr Eng Jpn, 129(4): 32–38, 1999
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
