Abstract
ABSTRACTValues of the diffusivity of silicon self-interstitials have been previously inferred from analyses of the in-diffusion of Au in undislocated Si, e.g., 2×10-7 cm2 s-1 at 1100 °C. A more complete analysis by numerical integration of the effective diffusion equation with fewer assumptions yields ahigher minimum value, 6×10-6 cm2s-1 at 1100 °C. Recently published experiments showing no measurable difference in the oxidation-reduced diffusion of Sb in Si at 10 and 40 microns are consistent with this high value.
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