Abstract
The diffusion of Sb in heavily doped n- and p-type Si has been studied to determine the activation energies and charge states of the point defects responsible for Sb diffusion. It is shown that neutral point defects, probably Vx, dominate under intrinsic doping conditions. For samples doped with high-concentration As or P backgrounds, Sb diffusion is dominated by a double-negatively charge point defect that causes an n2 concentration-dependent Sb diffusivity. Electric-field effects also are important. The measured diffusion coefficients are Dix = 17.5 exp(−4.05 eV/kT), and Di= = 0.01 exp(−3.75 eV/kT). The activation energies are consistent with diffusion via Vx and V= vacancies. Retarded diffusion of Sb in p+-doped samples with uniform B profiles fits an ion pairing model where Sb+B− pairs form to reduce the flux of Sb atoms.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.