Abstract
The general formula for the dielectric function epsilon ( omega ,q) for q to 0 is used to calculate the frequency dependent dielectric function of the semimetal Bi. Both the electrons at the L-points and the holes at the T-point are described by two-band models for which k.p theory gives the dispersion relation E(E+EG)=Eg Sigma i=13(h(cross)2ki2/2mi*). At room temperatures the calculation shows that the unknown temperature dependence of m2* cannot deviate much from the T-dependence of m1* and m3* found by Vecchi and Dresselhaus (1974). Further it turns out that the difference between the values of epsilon perpendicular to and epsilon /sub ///( perpendicular to and // to the trigonal axis) can be explained by the contribution of the holes. Finally, the calculation can be used for doped Bi. The results for the change in epsilon by doping agree with measurements on Sb-doped Bi.
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