Abstract
Silicon bolometers are currently under development for milliKelvin operation; these devices are being produced using Si wafer fabrication technology. The design and performance of individual bolometers, using doped layers with a thickness in the range 0.2 to 2 μm are described. The use of epitaxial growth to replace ion implantation for improved performance is discussed. For future use in space based X-ray astronomy, such devices could be fabricated as complete one or two dimensional arrays with integrated isolation and support. The proposed fabrication method for such arrays is outlined.
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