Abstract
An integrated amplifier has been designed to incorporate vacuum-deposited thin film field-effect transistors. An array of separate transistors was first produced to gain experience in manufacturing techniques and also to optimize the choice of electrode geometry and materials. A registration accuracy between layers of better than 5 μm was achieved by the use of a specially designed evaporator. The effects on the characteristics of water vapour and ion migration were largely eliminated by the complementary use of two transistors. The circuit had a midband gain of 20 db and a gain bandwidth product of approximately 500 kHz.
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