Abstract
For depletion-mode high electron mobility transistors (HEMTs), the on current (Ion) and the gate leakage current (Ig) alone will not be a good criterion to judge the quality of depletion-mode HEMTs. In this paper, we would like to propose the application of an Ion vs. log Ig plot to characterize depletion-mode HEMTs. Previously, it was proposed the gate leakage current of AlGaN/GaN HEMTs can be reduced by the insertion of a very thin evaporated Al in the Au/Ni metal gate. We will use this as an example to demonstrate the usefulness of the Ion vs. log Ig plot by showing that slowly evaporated Al gate does bring significant improvement.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
