Abstract
In this work the deposition process and the properties of a-SiC:H alloy fabricated for the first time by 55-kHz PECVD are investigated. It was found that 55-kHz PECVD allows to increase deposition rate of a-SiC:H films (5.3–11.1 Å/s) in comparison with the standard 13.56-MHz PECVD (∼3 Å/s). The analysis of deposition rate and Rutherford Backscattering Spectroscopy (RBS) measurements showed that the chemical reactions between SiH n spices and CH 4 control the incorporation of C into a-SiC:H films. An island type morphology of the a-SiC:H films was revealed by atomic force microscopy (AFM) analysis. It was shown from infrared (IR) and optical spectroscopy measurements that Si–C bonds formed in the interior of the islands determine the optical bandgap while CH n and SiH are located at the islands’ surface. A higher photosensitivity was observed for higher bandgap a-SiC:H alloy ( E g=2.0 eV). These results indicate that wide-bandgap photosensitive a-SiC:H alloys fabricated by high-rate 55-kHz PECVD technology are an attractive materials for photovoltaic device application.
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