Abstract
Effective attenuation lengths (EALs) of the photoelectrons in SiO2 were measured at various energies by photoelectron spectroscopy of the SiO2 thin film on the Si substrate with a certified thickness using synchrotron radiation (SR) as an excitation source. On the basis of the experimentally determined EALs, the thickness of another thin film was estimated and compared to that determined with the x-ray reflectivity (XRR) method.
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