The Determination of Surface Potential Fluctuation Values and Spatial Distribution of Traps in Insulators from the Temperature Dependence of the (Gp/ω)–ω Curves of MOS Structures

Abstract

The (Gp/ω)–ω curves at 163 and 295 K for MOS-structures on silicon with the different SiO2 oxide thickness and different surface charge values are measured. A technique is suggested for determining the fluctuation value of the surface potential and the distance of traps in the bulk oxide from the interfac? SiSiO2 from the above measurements. This distance turns out to be in the range of 1.5 to 3 A for different samples and contributes greatly to the broadening of the (Gp/ω) vs.ω curves for all the samples investigated. The fluctuation values of surface potential are 13 to 80 mV for different samples. A comparison of potential fluctuation values with the predicted ones obtained in assuming a random position of single positive charges shows a good agreement at the limiting parameter λ = 30 A. [Russian Text Ignored]