The determination of dominant diffusing species in the growth of amorphous interlayer between Gd and Si thin films by a Mo cluster marker experiment

Abstract

The dominant diffusing species in the formation of amorphous interlayer between Gd and Si thin films have been determined by a Mo cluster marker experiment. Multilayered metal thin films were deposited on (001) Si in an ultrahigh vacuum electron beam evaporator. The positions of the Mo cluster markers relative to the Si substrate, before and after heat treatment, were determined by transmission electron microscopy and energy dispersive x-ray as well as autocorrelation function analysis. The displacement of the Mo cluster markers in the amorphous interlayer during the Gd–Si interdiffusion indicates that Si atoms constitute the dominant diffusing species during the growth of the amorphous interlayer.