Abstract
Surface photovoltage data on CdSe films measured by Storr and Haneman have been analyzed with a formula originally intended to apply to amorphous silicon. The minority-carrier diffusion length and surface barrier width obtained are comparable to the results of Storr and Haneman using a different formula directly applicable to CdSe. It is shown also that a-Si:H analysis is generally suitable for deriving thin-film surface parameters.
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