Abstract
A critical comparison of the application of differential pulse voltammetry and anodic stripping voltammetry to the determination of micro amounts of copper in silicon is described. The anodic stripping technique offers advantages when a dropping mercury capillary with a long drop time is used. The method recommended allows the determination of copper in silicon with a precision of ± 5 %; the limit of determination is about 1μg g -1. Calibration graphs are linear in the range 0–0.2 μg Cu ml -1. Methods for the dissolution of silicon are also compared.
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