Abstract
Higher-order Laue zone (HOLZ) disk patterns obtained from arsenic-doped and undoped silicon are investigated under the exact [011] zone axis orientation at 100 kV. For this orientation, the fine HOLZ structure consists mainly of two bright lines produced from the intersections of a HOLZ reflection with two branches associated with atomic and tunneling sites of the zeroth-layer dispersion surfaces. The arsenic atom concentration and its strain contribution can be visibly detected by comparison of the two HOLZ lines on doped silicon with those on the undoped one. It is revealed that the position for these lines is not sensitive to the crystal thickness, Debye-Waller factors, and absorption potential but to the impurity concentration and accelerating voltage. The simple fitting between experiment and dynamical simulation permits a reasonable estimation of the arsenic atom concentration.
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