The detective quantum efficiency of cadmium telluride photon-counting x-ray detectors in breast imaging applications.

Abstract

In breast imaging applications, cadmium telluride (CdTe) photon counting x-ray detectors (PCDs) may reduce radiation dose and enable single-shot multi-energy x-ray imaging. The purpose of this work is to determine the upper limits of the detective quantum efficiency (DQE) of CdTe PCDs for x-ray mammography and to compare them with the published DQEs of energy-integrating detectors (EIDs) and other PCDs. We calibrated and validated a Monte Carlo (MC) model of the DQE of CdTe PCDs using an XCounter CdTe PCD. Our model accounted for charge sharing, electronic noise, and charge summation logic. We used a 28 kVp Mo/Mo spectrum hardened by 3.9cm of Lucite to optimize the detector thickness and energy threshold for pixel sizes of 50, 85, and 100 m with and without inter-pixel charge summation logic. The figure of merit used for optimization was the integral of the DQE, which is equivalent to the detectability index for a delta function task function, which represents a high-frequency task. For an electronic noise level equal to that of the XCounter, the optimal DQE(0) without charge summing was 0.74. Charge summing for charge-sharing correction reduced DQE(0) by 14% due to an increase in electronic noise. Reducing the electronic noise to ∼0.5keV per pixel in combination with charge summing resulted in DQE(0) 0.78 for 85 m pixels, which is approximately equal to that of a-Se and slot-scanning silicon-strip PCDs. At higher spatial frequencies, and for matched pixel sizes, the DQE was inferior to that of a-Se EIDs and superior to that of slot-scanning silicon-strip PCDs in the scan direction but inferior in the slit direction. (1) CdTe PCDs have the potential to provide a zero-frequency DQE equal to that of a-Se EIDs and slot-scanning silicon-strip PCDs, but this will require electronic noise levels ∼0.5keV per pixel. (2) At mid-to-high spatial frequencies the DQE of CdTe PCDs may be (a) inferior to that of a-Se EIDs and slot-scanning silicon-strip PCDs in the slit direction, and (b) superior to slot-scanning silicon-strip PCDs in the scan direction.