Abstract
Background limitations, especially those involving pulse pile-up, on the sensitivity to detection of heavy elements near the surface of Si were investigated with back-scattered 250 keV He2+ and C2+. Using gated electronics, pulse pile-up was reduced by as much as a factor of 1/60, which permitted a detection sensitivity, i.e., equal signal and background, of approximately 2 x 1011 Tl atoms/cm2 for He2+ back-scattering, while C2+ back-scattering data showed a detection sensitivity of about 2 x 1010 Tl atoms/cm2. Back-scattering from Si implanted with 20 keV Tl+to doses of 1 x 1013 and 1 x 1012 and C2+ back- scattering sensitivities.
Published Version
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