Abstract
A balanced-broadband low noise amplifier (LNA) was designed with the FR4 substrate, using packaged SiGe HBTs BFP640 and chip type passive components. The design principle and technology features of the structure of the balanced LNA were described. The computer simulated results indicate that this SiGe balanced LNA has the advantages of the noise figure less than 0.9 dB over 0.8 GHz to 1.7 GHz range, the high gain of 37 dB, the input and output reflected coefficients are all less than -50 dB.
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