Abstract

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. The Normally-off 1300V SiC VJFET device's current density is 260 A/cm 2 and current is 8 A at VG= 7 V and VD = 2 V, with related specific on-resistance 7.56 mΩ·cm 2 . The device exceeds 1300 V at gate bias VG = 0 V.

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