Abstract
AbstractThe article presents a Doherty power amplifier (DPA) with both high efficiency and good linearity for GSM base station using LDMOS transistors. Prepositive delay line structure (PDL) is proposed to satisfy the performances, both higher efficiency and better linearity are achieved. The test results show the proposed DPA reached an efficiency of 43.2% and an IMD3 of −47 dBc at 6 dB back‐off power, which is about 19% and 6.5 dBc improvement, respectively than the class AB amplifier, and the improvement is about 4% and 12 dBc, respectively compared with the DPA without PDL structure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 493–495, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24917
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