Abstract

A 1 GHz low-noise low-power bandpass amplifier suitable for RF front-end applications in wireless communication receivers is proposed and analyzed. A novel temperature compensation circuit is used to stabilize the amplifier gain so that the overall amplifier has good temperature stability. Moreover, a compact tunable positive-feedback circuit is connected to the integrated spiral inductor to generate negative resistance and enhance its Q value. A simple diode varactor circuit is adopted for center frequency tuning. These improved circuits reduce the power dissipation of the amplifier. HSPICE simulation has been extensively performed to verify the performance of the designed amplifier. The results show a gain of 26 dB at Q=30 under 2 V power supply with 35 mW power dissipation. The noise figure is 5 dB in the passband. The tunable frequency range is between 950 MHz and 1050 MHz. The gain variation is less than 4 dB in the range of 0/spl deg/C to 80/spl deg/C. Suitable noise figure and amplifier gain, low power dissipation, and good temperature stability makes the proposed bandpass amplifier quite feasible in RF front-end applications.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.