Abstract

In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> is in a range of 1.3~8.0 ms, the cutoff frequency f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Tgm</sub> and speed index S are 1.59 GHz and 13.5 ps/V respectively .

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