Abstract

It has been found, from the results of a design study carried out out on three-dimensional (3-D) SOI integration, that the expected improvements in speed and packing density over bulk technology are not large enough to make two-level 3-D viable in the context of VLSI circuits. However, the 3-D technique has been identified as having a major role in the area of mixed technology applications. The design and fabrication of a smart power-test-bed demonstration circuit, to evaluate the feasibility of this approach, are described. For this circuit a 50-70-V bulk DMOS power technology and a 3- mu m SOI CMOS controlling logic have been developed. To provide maximum design flexibility both of these technologies have been combined in a 3-D SOI gate array, suitable for semicustom interfacing and medium current/voltage driving applications. The evaluation circuit is configured as a 50-V/1-A stepper motor controller. >

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