Abstract
The analysis and design of DAR(Double-Avalanche Region) IMPATT diodes are considered. The so called-asymmetrical DAR-IMPATT is seriously questionmarked due to its poor power and efficiency capabilities. The term' symmetrical, is given an extended meaning in the description of the symmetrical DAR-IMPATT structure whose design is found to be less pretentious than first thought of in literature. The design method presented is based on efficiency enhancement criteria and the less sophisticated analytical model is in reasonable agreement with more involved computer investigations. Design diagrams are presented for Si and GaAs diodes in the mm-wave range. The power of the DAR is somewhat lower than that of the DDR-IMPATT but its theoretical efficiency is up to 50%.
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