Abstract
AbstractThis study is concerned with the fundamental limitations imposed by cascade mixing and recoil implantation on the depth resolution of secondary ion mass spectrometry (SIMS), and the effects of these limitations on the determination of impurity profiles in semiconductors.We present experimental results of measurements on atomically, or near atomically abrupt impurity profiles in Si using magnetic sector (Cameca) and quadrupole (Atomica) SIMS machines. The analysis conditions and samples have been chosen to minimize instrument (crater wall resputtering) and surface (equilibration time) effects. Under such conditions the leading edge of an abrupt signal is smeared to a complimentary error function, while the trailing edge exhibits an exponential decay reminiscent of recoil implantation profiles.Modifications of the Boltzmann Transport Equation (BTE) approach to ion implantation in multilayer targets will be shown to provide a first principles calculation of such SIMS knock-on phenomena, which is in good agreement with the empirical results.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
