Abstract
The deposition of polycrystalline and amorphous silicon from silane in H 2 and N 2 carrier gases has been studied. Temperatures between 525 and 700°C have been used in a low-pressure reactor, using a constant pressure (7 × 10 -4 bar) and a constant gas flow. It was found that at low input pressures of silane the growth rate is linearly proportional to the silane input pressure both in hydrogen and in nitrogen and that the growth rate is higher in nitrogen than in hydrogen. At higher input pressures of silane the growth rate saturates and also becomes independent of the hydrogen partial pressure. Analysis of the experimental data shows that the liberation of hydrogen from adsorbed SiH 2 species at the silicon surface most probably determines the rate of deposition.
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