Abstract
A process used to deposit various compositions of aluminosilicate films on a silicon substrate held at various temperatures is described. The film deposition rate with a total vapor concentration of 0.12 v/o (volume per cent) in the gas phase is 2500 Aå/min at 1100°C and 150 Aå/min at 880°C with an activation energy of 42.5 kcal/mol. in this temperature range. The deposition rate is increased as the concentration is increased. The chemical composition of the films was determined by x‐ray fluorescence. The films were smooth to the eye but grainy at 12,000 times. A compositional relationship between indices of refraction of and was found. The dielectric strength of the films was found to be similar to or higher.Sodium diffusion data for aluminosilicate films and silica films are presented. For a given film depth sodium concentration in an aluminosilicate film is less than the concentration in a silica film. CV measurement of an MIS capacitor gave a typical surface charge . Films of less than 50% were etchable in concentrated hydrofluoric acid or in buffered hydrofluoric acid. Films of greater than 50% were somewhat resistant to hydrofluoric acid but were etched in hot (180°C) phosphoric acid with a rate about 100 Aå/min.
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